International Journal Evolving Sustainable and Renewable Energy Solutions
Resonant Tunneling Frequency and Current in a Nanostructured Diode with a Two-Fold Right Triangular Barrier
Abstract
A. M. Elabsy and M. T. Attia
The resonant tunneling frequency and electric current were studied in a nanostructured diode containing a two-fold symmetrical right triangular barrier made of AlyGa1-yAs/GaAs/AlyGa1-yAs semiconductors. The complex energy method was employed to determine the quasi-energy states, utilizing varying effective masses. The resonant tunneling energy decreased exponentially with increasing well width when the barrier thickness was fixed. Keeping the well width and barrier thickness constant and increasing the aluminum concentration, decreases the resonant tunneling frequency while increasing the resonant tunneling energy. The resonant tunneling frequency was increased to a higher terahertz range by reducing the barrier thickness and well width. Wider wells and thicker barriers result in lower resonant frequencies. The resonant tunneling current was analyzed and found to be significantly influenced by the diode parameters, including aluminum content, well width, and barrier thickness in the collector region. The resonant tunneling current behavior aligned well with previous literature findings. It is noted that the structural features of the nanostructured diode, which has a two-fold symmetrical right triangular barrier, can be adjusted to function within the targeted frequency range and the peak tunneling current.